| PART |
Description |
Maker |
| HD68A44 HD6844 HD68B44 |
Direct Memory Access Controller
|
Hitachi Semiconductor
|
| AN1102 |
ST10 DIRECT MEMORY ACCESS USING MAC - APP NOTE - REV A - 5/11/98
|
SGS Thomson Microelectronics
|
| UM6264 UM6264M-10 UM6264M-10L UM6264-12 UM6264-10 |
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:64-BGA; Memory Configuration:64K x 8; Memory Size:32MB; NOR Flash Type:Page Mode Access
8K x 8 CMOS SRAM
|
United Microelectronics Corporation
ETC
UMC[UMC Corporation]
|
| K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R44 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IDT70824L IDT70824L20G IDT70824L20GB IDT70824L20PF |
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM)
|
IDT
Integrated Device Technology
|
| ULS-2821R ULS-2803H ULS-2823H ULS-2822 ULS-2815H U |
HIGH-VOLTAGE/ HIGH-CURRENT DARLINGTON ARRAYS
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 高电压，大电流达林顿阵列
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory Configuration:128K x 16; Memory Size:128MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 高电压，大电流达林顿阵列
50 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR
|
Allegro MicroSystems, Inc.
|
| SI3068 SI3068-B-FS |
FCC EMBEDDED DIRECT ACCESS ARRANGEMENT
|
Silicon Laboratories Inc.
|
| SI3066-B-FS SI3066 |
V.32 FCC EMBEDDED DIRECT ACCESS ARRANGEMENT
|
SILABS[Silicon Laboratories]
|
| SI3010 SI3010-X-FS SI3018 SI3019 SI3019-X-FS SI301 |
GLOBAL SERIAL INTERFACE DIRECT ACCESS ARRANGEMENT
|
Silicon Laboratories
SILABS
|
| SI3010 SI3018 SI3019 SI3056 |
GLOBAL SERIAL INTERFACE DIRECT ACCESS ARRANGEMENT
|
ETC
|
| SCM6946 MCM6946 |
512K x 8 Bit Static Random Access Memory
512K x 8 Bit Static Random Access Memory
512Kx8 Bit Static Random Access Memory(512Kx8位静态RAM)
|
Motorola, Inc.
|
| TMM2063AP-10 TMM2063AP-12 TMM2063AP-70 |
70ns ; 80mA; V(cc): -0.5 to 7.0V; 0.8W; 65,536 bits high speed and low power static access memory
120ns ; 80mA; V(cc): -0.5 to 7.0V; 0.8W; 65,536 bits high speed and low power static access memory
100ns ; 80mA; V(cc): -0.5 to 7.0V; 0.8W; 65,536 bits high speed and low power static access memory
65536 BITS HIGH SPEED AND LOW POWER STATIC RAMDOM ACCESS MEMORY
|
Toshiba Semiconductor
|
